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G4S06510DT
- Manufacturer's Part No.:G4S06510DT
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:SIC SCHOTTKY DIODE 650V 10A 2-PI
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 21350
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $5.19000 | US $5.19 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Quick RFQ
Product Parameter
- ManufacturerGlobal Power
- Manufacturer's Part No.G4S06510DT
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesDiodes - Rectifiers - Single
- Series-
- MfrGlobal Power Technology-GPT
- SpeedNo Recovery Time > 500mA (Io)
- Diode TypeSilicon Carbide Schottky
- REACH StatusVendor Undefined
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Capacitance @ Vr, F550pF @ 0V, 1MHz
- Supplier Device PackageTO-263
- Reverse Recovery Time (trr)0 ns
- Current - Reverse Leakage @ Vr50 μA @ 650 V
- Voltage - DC Reverse (Vr) (Max)650 V
- Current - Average Rectified (Io)32A
- Operating Temperature - Junction-55°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Environmental & Export Classifications
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Delivery Time
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