G4S12010PM
- Manufacturer's Part No.:G4S12010PM
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:SIC SCHOTTKY DIODE 1200V 10A 2-P
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 5639
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $18.83000 | US $18.83 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerGlobal Power
- Manufacturer's Part No.G4S12010PM
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesDiodes - Rectifiers - Single
- Series-
- MfrGlobal Power Technology-GPT
- SpeedNo Recovery Time > 500mA (Io)
- Diode TypeSilicon Carbide Schottky
- REACH StatusVendor Undefined
- Mounting TypeThrough Hole
- Package / CaseTO-247-2
- Capacitance @ Vr, F-
- Supplier Device PackageTO-247AC
- Reverse Recovery Time (trr)0 ns
- Current - Reverse Leakage @ Vr30 μA @ 1700 V
- Voltage - DC Reverse (Vr) (Max)1200 V
- Current - Average Rectified (Io)33.2A
- Operating Temperature - Junction-55°C ~ 175°C
Environmental & Export Classifications
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