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G6N02L

  • Available: 93606

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.45000US $0.45

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Product Parameter

  • Manufacturer
    Goford Semiconductor
  • Manufacturer's Part No.
    G6N02L
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
  • Product Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs
    11.3mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id
    0.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    12.5 nC @ 10 V
  • Vgs (Max)
    ±12V
  • Input Capacitance (Ciss) (Max) @ Vds
    1140 pF @ 10 V
  • FET Feature
    Standard
  • Power Dissipation (Max)
    1.8W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    SOT-23-3
  • Package / Case
    TO-236-3, SC-59, SOT-23-3

Environmental & Export Classifications

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