HGT1S10N120BNS
- Manufacturer's Part No.:HGT1S10N120BNS
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 35A 298W TO263AB
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 68800
- Available: 28534
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.30000 | US $4.30 |
10+ | US $3.87000 | US $38.70 |
30+ | US $3.01000 | US $90.30 |
100+ | US $2.47250 | US $247.25 |
500+ | US $2.36500 | US $1182.50 |
1000+ | US $2.15000 | US $2150.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.HGT1S10N120BNS
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount, Through Hole
- Width9.65mm
- Height4.83mm
- Length10.67mm
- Weight1.31247g
- Current35A
- Voltage1.2kV
- HTS Code8541.29.00.95
- IGBT TypeNPT
- Lead FreeLead Free
- PackagingTube
- Input TypeStandard
- Gate Charge100nC
- Part StatusNot For New Designs
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Turn On Time32 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating35A
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition960V, 10A, 10 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTin (Sn)
- Base Part NumberHGT1S10N120
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 1 day ago)
- Switching Energy320μJ (on), 800μJ (off)
- Factory Lead Time44 Weeks
- Power Dissipation298W
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Td (on/off) @ 25°C23ns/165ns
- Element ConfigurationSingle
- Max Breakdown Voltage1.2kV
- Max Collector Current35A
- Max Power Dissipation312W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations2
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
- Turn Off Time-Nom (toff)330 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Continuous Collector Current55A
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)1.2kV
- Current - Collector Pulsed (Icm)80A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage2.7V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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