HGT1S20N60C3S9A
- Manufacturer's Part No.:HGT1S20N60C3S9A
- Manufacturer:
- Categories:
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- Series:-
- Description:IGBT 600V 45A 164W TO263AB
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 48000
- Available: 34819
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.32000 | US $4.32 |
10+ | US $3.88800 | US $38.88 |
30+ | US $3.02400 | US $90.72 |
100+ | US $2.48400 | US $248.40 |
500+ | US $2.37600 | US $1188.00 |
1000+ | US $2.16000 | US $2160.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.HGT1S20N60C3S9A
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.83mm
- Length10.67mm
- Weight1.31247g
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Input TypeStandard
- Gate Charge91nC
- Part StatusNot For New Designs
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Turn On Time52 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating45A
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition480V, 20A, 10 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 1 day ago)
- Switching Energy295μJ (on), 500μJ (off)
- Factory Lead Time44 Weeks
- Power Dissipation164W
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Turn On Delay Time28 ns
- Voltage - Rated DC600V
- Td (on/off) @ 25°C28ns/151ns
- Turn-Off Delay Time151 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Max Collector Current45A
- Max Power Dissipation164W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 20A
- Turn Off Time-Nom (toff)388 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Continuous Collector Current15A
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)300A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.4V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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