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HGTD3N60C3

  • Available: 57954

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.47000US $0.47

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Product Parameter

  • Manufacturer
    Harris
  • Manufacturer's Part No.
    HGTD3N60C3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • Mfr
    Harris Corporation
  • ECCN
    EAR99
  • IGBT Type
    -
  • Input Type
    Standard
  • Gate Charge
    13.8 nC
  • Power - Max
    33 W
  • REACH Status
    Vendor Undefined
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Test Condition
    -
  • Switching Energy
    -
  • Td (on/off) @ 25°C
    -
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Supplier Device Package
    I-Pak
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 3A
  • Reverse Recovery Time (trr)
    10 ns
  • Current - Collector (Ic) (Max)
    6 A
  • Current - Collector Pulsed (Icm)
    24 A
  • Voltage - Collector Emitter Breakdown (Max)
    600 V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    Not applicable
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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