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HGTG10N120BND
- Manufacturer's Part No.:HGTG10N120BND
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 35A 298W TO247
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 10450
- Available: 23675
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.92000 | US $1.92 |
10+ | US $1.28000 | US $12.80 |
30+ | US $0.96000 | US $28.80 |
100+ | US $0.76800 | US $76.80 |
500+ | US $0.70400 | US $352.00 |
1000+ | US $0.64000 | US $640.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.HGTG10N120BND
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width4.82mm
- Height20.82mm
- Length15.87mm
- Weight6.39g
- HTS Code8541.29.00.95
- IGBT TypeNPT
- Lead FreeLead Free
- PackagingTube
- Published2011
- Rise Time165ns
- Input TypeStandard
- Gate Charge100nC
- Part StatusNot For New Designs
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Turn On Time32 ns
- Mounting TypeThrough Hole
- Current Rating35A
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition960V, 10A, 10 Ω, 15V
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 2 days ago)
- Switching Energy850μJ (on), 800μJ (off)
- Factory Lead Time7 Weeks
- Power Dissipation298W
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Turn On Delay Time23 ns
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Td (on/off) @ 25°C23ns/165ns
- Turn-Off Delay Time165 ns
- Element ConfigurationSingle
- Max Collector Current35A
- Max Power Dissipation298W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time70 ns
- Number of Terminations3
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
- Turn Off Time-Nom (toff)330 ns
- Transistor Element MaterialSILICON
- Continuous Collector Current35A
- Collector Emitter Voltage (VCEO)1.2kV
- Current - Collector Pulsed (Icm)80A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage2.45V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)Not Applicable
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