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HGTG18N120BND

  • In Stock: 503
  • Available: 1000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $60.25040US $60.25
10+US $45.18780US $451.88
30+US $39.16276US $1174.88
100+US $34.64398US $3464.40
500+US $32.53522US $16267.61
1000+US $30.12520US $30125.20

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    HGTG18N120BND
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    20.82mm
  • Length
    15.87mm
  • Weight
    6.39g
  • HTS Code
    8541.29.00.95
  • Polarity
    NPN
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2011
  • Rise Time
    22ns
  • Input Type
    Standard
  • Gate Charge
    165nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    38 ns
  • Mounting Type
    Through Hole
  • Current Rating
    54A
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    960V, 18A, 3 Ω, 15V
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Switching Energy
    1.9mJ (on), 1.8mJ (off)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    390W
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    200ns
  • Number of Elements
    1
  • Turn On Delay Time
    23 μs
  • Voltage - Rated DC
    1.2kV
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    23ns/170ns
  • Turn-Off Delay Time
    170 μs
  • Element Configuration
    Single
  • Max Collector Current
    54A
  • Max Power Dissipation
    390W
  • Operating Temperature
    -55°C~150°C TJ
  • Reverse Recovery Time
    75 ns
  • Number of Terminations
    3
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 18A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    345 ns
  • Transistor Element Material
    SILICON
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Pulsed (Icm)
    160A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2.45V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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