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HGTG20N60A4

  • In Stock: 120000
  • Available: 19482

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $31.88600US $31.89
10+US $23.91450US $239.15
30+US $20.72590US $621.78
100+US $18.33445US $1833.45
500+US $17.21844US $8609.22
1000+US $15.94300US $15943.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    HGTG20N60A4
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    20.82mm
  • Length
    15.87mm
  • Weight
    6.39g
  • HTS Code
    8541.29.00.95
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2011
  • Rise Time
    12ns
  • Input Type
    Standard
  • Gate Charge
    142nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    28 ns
  • Mounting Type
    Through Hole
  • Current Rating
    70A
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    390V, 20A, 3 Ω, 15V
  • Case Connection
    COLLECTOR
  • Contact Plating
    Tin
  • Base Part Number
    HGTG20N60
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Switching Energy
    105μJ (on), 150μJ (off)
  • Factory Lead Time
    4 Weeks
  • Power Dissipation
    290W
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Turn On Delay Time
    15 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    15ns/73ns
  • Turn-Off Delay Time
    73 ns
  • Element Configuration
    Single
  • Max Collector Current
    70A
  • Max Power Dissipation
    290W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 20A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    160 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    7V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    280A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.8V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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