HGTG20N60A4
- Manufacturer's Part No.:HGTG20N60A4
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 70A 290W TO247
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 120000
- Available: 19482
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $31.88600 | US $31.89 |
10+ | US $23.91450 | US $239.15 |
30+ | US $20.72590 | US $621.78 |
100+ | US $18.33445 | US $1833.45 |
500+ | US $17.21844 | US $8609.22 |
1000+ | US $15.94300 | US $15943.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.HGTG20N60A4
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width4.82mm
- Height20.82mm
- Length15.87mm
- Weight6.39g
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTube
- Published2011
- Rise Time12ns
- Input TypeStandard
- Gate Charge142nC
- Part StatusActive
- Pbfree Codeyes
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time28 ns
- Mounting TypeThrough Hole
- Current Rating70A
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition390V, 20A, 3 Ω, 15V
- Case ConnectionCOLLECTOR
- Contact PlatingTin
- Base Part NumberHGTG20N60
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Switching Energy105μJ (on), 150μJ (off)
- Factory Lead Time4 Weeks
- Power Dissipation290W
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Turn On Delay Time15 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C15ns/73ns
- Turn-Off Delay Time73 ns
- Element ConfigurationSingle
- Max Collector Current70A
- Max Power Dissipation290W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 20A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)160 ns
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max7V
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)280A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.8V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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