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HGTG27N120BN

  • In Stock: 1000
  • Available: 13671

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $8.82000US $8.82
10+US $7.93800US $79.38
30+US $6.17400US $185.22
100+US $5.07150US $507.15
500+US $4.85100US $2425.50
1000+US $4.41000US $4410.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    HGTG27N120BN
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    20.82mm
  • Length
    15.87mm
  • Weight
    6.39g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Input Type
    Standard
  • Gate Charge
    270nC
  • Part Status
    Not For New Designs
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Turn On Time
    42 ns
  • Mounting Type
    Through Hole
  • Current Rating
    72A
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    960V, 27A, 3 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 2 days ago)
  • Switching Energy
    2.2mJ (on), 2.3mJ (off)
  • Factory Lead Time
    44 Weeks
  • Power Dissipation
    500W
  • Additional Feature
    LOW CONDUCTION LOSS, AVALANCHE RATED
  • Number of Elements
    1
  • Turn On Delay Time
    24 ns
  • Voltage - Rated DC
    1.2kV
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    24ns/195ns
  • Turn-Off Delay Time
    240 ns
  • Element Configuration
    Single
  • Max Collector Current
    72A
  • Max Power Dissipation
    500W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 27A
  • Turn Off Time-Nom (toff)
    360 ns
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    72A
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Pulsed (Icm)
    216A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2.45V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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