HGTG30N60A4
- Manufacturer's Part No.:HGTG30N60A4
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 75A 463W TO247
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 2000
- Available: 12672
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.00000 | US $6.00 |
10+ | US $5.40000 | US $54.00 |
30+ | US $4.20000 | US $126.00 |
100+ | US $3.45000 | US $345.00 |
500+ | US $3.30000 | US $1650.00 |
1000+ | US $3.00000 | US $3000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.HGTG30N60A4
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width4.82mm
- Height20.82mm
- Length15.87mm
- Weight6.39g
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTube
- Published2011
- Rise Time12ns
- Input TypeStandard
- Gate Charge225nC
- Part StatusActive
- Pbfree Codeyes
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time35 ns
- Mounting TypeThrough Hole
- Current Rating75A
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition390V, 30A, 3 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTin (Sn)
- Base Part NumberHGTG30N60
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Switching Energy280μJ (on), 240μJ (off)
- Factory Lead Time4 Weeks
- Power Dissipation463W
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)70ns
- Number of Elements1
- Turn On Delay Time25 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C25ns/150ns
- Turn-Off Delay Time150 ns
- Element ConfigurationSingle
- Max Collector Current75A
- Max Power Dissipation463W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 30A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)238 ns
- Transistor Element MaterialSILICON
- Continuous Collector Current75A
- Gate-Emitter Thr Voltage-Max7V
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)240A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.8V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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