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HN1B04FE-Y,LF

  • In Stock: 1760237
  • Available: 16

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.09240US $0.09
10+US $0.06160US $0.62
30+US $0.04620US $1.39
100+US $0.03696US $3.70
500+US $0.03388US $16.94
1000+US $0.03080US $30.80

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    HN1B04FE-Y,LF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    100mW
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS
  • Mounting Type
    Surface Mount
  • Terminal Form
    FLAT
  • Package / Case
    SOT-563, SOT-666
  • Transistor Type
    NPN, PNP
  • Factory Lead Time
    12 Weeks
  • Terminal Position
    DUAL
  • Number of Elements
    2
  • Transition Frequency
    80MHz
  • Max Breakdown Voltage
    50V
  • Max Collector Current
    150mA
  • Max Power Dissipation
    100mW
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    NPN AND PNP
  • Frequency - Transition
    80MHz
  • Number of Terminations
    6
  • Transistor Application
    AMPLIFIER
  • Transistor Element Material
    SILICON
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Collector Emitter Voltage (VCEO)
    250mV
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Collector Emitter Breakdown Voltage
    50V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 2mA 6V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-F6
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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