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HN1C03F-B(TE85L,F)
- Manufacturer's Part No.:HN1C03F-B(TE85L,F)
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:TRANS 2NPN 20V 0.3A SM6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 617873
- Available: 3000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.45408 | US $0.45 |
10+ | US $0.30272 | US $3.03 |
30+ | US $0.22704 | US $6.81 |
100+ | US $0.18163 | US $18.16 |
500+ | US $0.16650 | US $83.25 |
1000+ | US $0.15136 | US $151.36 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerToshiba
- Manufacturer's Part No.HN1C03F-B(TE85L,F)
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- hFE Min200
- PolarityNPN
- Frequency30MHz
- PackagingTape & Reel (TR)
- Published2009
- Part StatusActive
- Power - Max300mW
- Mounting TypeSurface Mount
- Number of Pins6
- Package / CaseSC-74, SOT-457
- Transistor Type2 NPN (Dual)
- Factory Lead Time12 Weeks
- Power Dissipation300mW
- Number of Elements2
- Radiation HardeningNo
- Element ConfigurationDual
- Max Breakdown Voltage20V
- Max Collector Current300mA
- Max Power Dissipation300mW
- Operating Temperature150°C TJ
- Frequency - Transition30MHz
- Gain Bandwidth Product30MHz
- Supplier Device PackageSM6
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Emitter Base Voltage (VEBO)25V
- Collector Base Voltage (VCBO)50V
- Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30mA
- Current - Collector (Ic) (Max)300mA
- Collector Emitter Voltage (VCEO)20V
- Current - Collector Cutoff (Max)100nA ICBO
- Collector Emitter Breakdown Voltage20V
- Collector Emitter Saturation Voltage42mV
- DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 4mA 2V
- Voltage - Collector Emitter Breakdown (Max)20V
Environmental & Export Classifications
- HTSUS8541.21.0095
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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