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HN1C03F-B(TE85L,F)

  • In Stock: 617873
  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.45408US $0.45
10+US $0.30272US $3.03
30+US $0.22704US $6.81
100+US $0.18163US $18.16
500+US $0.16650US $83.25
1000+US $0.15136US $151.36

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    HN1C03F-B(TE85L,F)
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • hFE Min
    200
  • Polarity
    NPN
  • Frequency
    30MHz
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • Part Status
    Active
  • Power - Max
    300mW
  • Mounting Type
    Surface Mount
  • Number of Pins
    6
  • Package / Case
    SC-74, SOT-457
  • Transistor Type
    2 NPN (Dual)
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    300mW
  • Number of Elements
    2
  • Radiation Hardening
    No
  • Element Configuration
    Dual
  • Max Breakdown Voltage
    20V
  • Max Collector Current
    300mA
  • Max Power Dissipation
    300mW
  • Operating Temperature
    150°C TJ
  • Frequency - Transition
    30MHz
  • Gain Bandwidth Product
    30MHz
  • Supplier Device Package
    SM6
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Emitter Base Voltage (VEBO)
    25V
  • Collector Base Voltage (VCBO)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 3mA, 30mA
  • Current - Collector (Ic) (Max)
    300mA
  • Collector Emitter Voltage (VCEO)
    20V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Collector Emitter Breakdown Voltage
    20V
  • Collector Emitter Saturation Voltage
    42mV
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    350 @ 4mA 2V
  • Voltage - Collector Emitter Breakdown (Max)
    20V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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