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HN3A51F(TE85L,F)
- Manufacturer's Part No.:HN3A51F(TE85L,F)
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- Description:TRANS 2PNP 120V 0.1A SM6
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- In Stock: 11327
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- Available: 11327
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Product Parameter
- ManufacturerToshiba
- Manufacturer's Part No.HN3A51F(TE85L,F)
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- hFE Min200
- PolarityPNP
- Frequency100MHz
- PackagingCut Tape (CT)
- Published2009
- Part StatusObsolete
- Power - Max300mW
- Mounting TypeSurface Mount
- Number of Pins6
- Package / CaseSC-74, SOT-457
- Transistor Type2 PNP (Dual)
- Power Dissipation300mW
- Number of Elements2
- Radiation HardeningNo
- Element ConfigurationDual
- Max Breakdown Voltage120V
- Max Collector Current100mA
- Max Power Dissipation300mW
- Operating Temperature150°C TJ
- Frequency - Transition100MHz
- Gain Bandwidth Product100MHz
- Supplier Device PackageSM6
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Emitter Base Voltage (VEBO)-5V
- Collector Base Voltage (VCBO)-120V
- Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
- Current - Collector (Ic) (Max)100mA
- Collector Emitter Voltage (VCEO)300mV
- Current - Collector Cutoff (Max)100nA ICBO
- Collector Emitter Breakdown Voltage120V
- Collector Emitter Saturation Voltage-300mV
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 6V
- Voltage - Collector Emitter Breakdown (Max)120V
Environmental & Export Classifications
- HTSUS8541.21.0075
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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