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HUFA76407DK8T-F085

  • Available: 128988

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.17509US $2.18
10+US $1.45006US $14.50
30+US $1.08754US $32.63
100+US $0.87004US $87.00
500+US $0.79753US $398.77
1000+US $0.72503US $725.03

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    HUFA76407DK8T-F085
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    Automotive, AEC-Q101, UltraFET™
  • ECCN
    EAR99
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • FET Feature
    Logic Level Gate
  • Part Status
    Not For New Designs
  • Pbfree Code
    yes
  • Power - Max
    2.5W
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • JEDEC-95 Code
    MS-012AA
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 3.8A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    60V
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    11.2nC @ 10V
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G8
  • JESD-609 Code
    e4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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