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IAUT300N10S5N015ATMA1

  • In Stock: 5900
  • Available: 21947

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $7.57050US $7.57
10+US $6.81345US $68.13
30+US $5.29935US $158.98
100+US $4.35304US $435.30
500+US $4.16378US $2081.89
1000+US $3.78525US $3785.25

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Description

The IAUT300N10S5N015ATMA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power electronics, including automotive, industrial, and consumer electronics.

Key Features:

  1. N-Channel Configuration: The IAUT300N10S5N015ATMA1 is an N-channel MOSFET, which means it uses electrons as the charge carriers, providing lower on-resistance and higher efficiency compared to P-channel devices.

  2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle high-voltage applications effectively.

  3. Current Rating: It can handle a continuous drain current (I_D) of up to 300A, making it suitable for high-power applications.

  4. On-Resistance (R_DS(on)): The on-resistance is typically low, around 10 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power losses during operation and enhances thermal performance.

  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, allowing for easy drive with standard logic levels.

  6. Package Type: The IAUT300N10S5N015ATMA1 is housed in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.

  7. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in maintaining lower operating temperatures during high-load conditions.

  8. Fast Switching Speed: This MOSFET is designed for fast switching applications, making it ideal for use in switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits.

  9. Robustness: The device is designed to withstand harsh operating conditions, including high temperatures and electrical stress, making it reliable for automotive and industrial applications.

Applications:

  • Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
  • Motor Drives: Suitable for driving electric motors in various applications, including automotive and industrial machinery.
  • DC-DC Converters: Ideal for use in buck, boost, and buck-boost converters.
  • Battery Management Systems: Utilized in systems that require efficient power management for battery charging and discharging.

Conclusion:

The IAUT300N10S5N015ATMA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that excels in high-power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a preferred choice for engineers looking to optimize power efficiency in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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