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IGN1011L1200

  • Available: 95

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $914.14000US $914.14

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Product Parameter

  • Manufacturer
    Integra Technologies Inc.
  • Manufacturer's Part No.
    IGN1011L1200
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - RF
  • Series
  • ECCN
    EAR99
  • Part Status
    Active
  • Configuration
    SINGLE
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Operating Mode
    DEPLETION MODE
  • Case Connection
    SOURCE
  • Factory Lead Time
    4 Weeks
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Polarity/Channel Type
    N-CHANNEL
  • Highest Frequency Band
    L B
  • Number of Terminations
    2
  • Transistor Application
    AMPLIFIER
  • DS Breakdown Voltage-Min
    180V
  • Operating Temperature (Min)
    -55°C
  • Transistor Element Material
    GALLIUM NITRIDE

Environmental & Export Classifications

  • HTSUS
    8541.29.0075
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-CDFM-F2
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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