IHW30N100R
- Manufacturer's Part No.:IHW30N100R
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1000V 60A 412W TO247-3
- Datasheet:
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- Available: 3849
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IHW30N100R
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- IGBT TypeTrench Field Stop
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2008
- Input TypeStandard
- Gate Charge209nC
- Part StatusObsolete
- SubcategoryInsulated Gate BIP Transistors
- Halogen FreeNot Halogen Free
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-247AC
- Mounting TypeThrough Hole
- Surface MountNO
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition600V, 30A, 26 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTIN
- Switching Energy2.1mJ (off)
- Power Dissipation412W
- Number of Elements1
- Radiation HardeningNo
- Td (on/off) @ 25°C-/846ns
- Element ConfigurationSingle
- Max Collector Current60A
- Max Power Dissipation412W
- Operating Temperature-40°C~175°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 30A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)988.4 ns
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6.4V
- Collector Emitter Voltage (VCEO)1kV
- Current - Collector Pulsed (Icm)90A
- Collector Emitter Breakdown Voltage1kV
- Collector Emitter Saturation Voltage1.75V
- Voltage - Collector Emitter Breakdown (Max)1000V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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