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IHW30N135R3FKSA1

  • Available: 240

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $5.37314US $5.37
10+US $4.83583US $48.36
30+US $3.76120US $112.84
100+US $3.08956US $308.96
500+US $2.95523US $1477.62
1000+US $2.68657US $2686.57

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IHW30N135R3FKSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    TrenchStop®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    Trench
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2006
  • Input Type
    Standard
  • Gate Charge
    263nC
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    349W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    600V, 30A, 10 Ω, 15V
  • Terminal Finish
    Tin (Sn)
  • Switching Energy
    1.93mJ (off)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    175W
  • Td (on/off) @ 25°C
    -/337ns
  • Element Configuration
    Single
  • Max Collector Current
    60A
  • Max Power Dissipation
    349W
  • Operating Temperature
    -40°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Vce(on) (Max) @ Vge, Ic
    1.85V @ 15V, 30A
  • Gate-Emitter Voltage-Max
    20V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Gate-Emitter Thr Voltage-Max
    6.4V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Emitter Voltage (VCEO)
    1.35kV
  • Current - Collector Pulsed (Icm)
    90A
  • Collector Emitter Breakdown Voltage
    1.35kV
  • Collector Emitter Saturation Voltage
    1.85V
  • Voltage - Collector Emitter Breakdown (Max)
    1350V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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