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IKD10N60RFATMA1

  • In Stock: 112915
  • Available: 52

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.34402US $2.34
10+US $1.56268US $15.63
30+US $1.17201US $35.16
100+US $0.93761US $93.76
500+US $0.85947US $429.73
1000+US $0.78134US $781.34

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IKD10N60RFATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    TrenchStop®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • IGBT Type
    Trench Field Stop
  • Lead Free
    Contains Lead
  • Packaging
    Cut Tape (CT)
  • Published
    2008
  • Input Type
    Standard
  • Gate Charge
    64nC
  • Part Status
    Active
  • Pbfree Code
    no
  • Power - Max
    150W
  • Subcategory
    Insulated Gate BIP Transistors
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Test Condition
    400V, 10A, 26 Ω, 15V
  • Base Part Number
    *KD10N60
  • Switching Energy
    190μJ (on), 160μJ (off)
  • Factory Lead Time
    16 Weeks
  • Td (on/off) @ 25°C
    12ns/168ns
  • Element Configuration
    Single
  • Max Breakdown Voltage
    600V
  • Max Collector Current
    20A
  • Max Power Dissipation
    150W
  • Operating Temperature
    -40°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    72 ns
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 10A
  • Gate-Emitter Voltage-Max
    20V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Gate-Emitter Thr Voltage-Max
    5.7V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    30A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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