IKD10N60R
- Manufacturer's Part No.:IKD10N60R
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchStop®
- Description:IGBT 600V 20A 150W TO252-3
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 8890
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IKD10N60R
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesTrenchStop®
- ECCNEAR99
- IGBT TypeTrench
- PackagingCut Tape (CT)
- Pin Count3
- Published2011
- Input TypeStandard
- Gate Charge64nC
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max150W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time24 ns
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Test Condition400V, 10A, 23 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTin (Sn)
- Base Part Number*KD10N60
- Switching Energy590μJ
- Terminal PositionSINGLE
- Number of Elements1
- Td (on/off) @ 25°C14ns/192ns
- Qualification StatusNot Qualified
- Operating Temperature-40°C~175°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reach Compliance Codecompliant
- Reverse Recovery Time62ns
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 10A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)428 ns
- Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max (Abs)150W
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5.7V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current - Collector (Ic) (Max)20A
- Current - Collector Pulsed (Icm)30A
- Voltage - Collector Emitter Breakdown (Max)600V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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