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IKW50N65ES5XKSA1

  • Available: 17612

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $5.83266US $5.83
10+US $5.24939US $52.49
30+US $4.08286US $122.49
100+US $3.35378US $335.38
500+US $3.20796US $1603.98
1000+US $2.91633US $2916.33

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IKW50N65ES5XKSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    TrenchStop™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    Trench
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2003
  • Input Type
    Standard
  • Gate Charge
    120nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    274W
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Turn On Time
    45 ns
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 50A, 8.2 Ω, 15V
  • Case Connection
    COLLECTOR
  • Switching Energy
    1.23mJ (on), 550μJ (off)
  • Factory Lead Time
    26 Weeks
  • Number of Elements
    1
  • Td (on/off) @ 25°C
    20ns/127ns
  • Element Configuration
    Single
  • Max Collector Current
    80A
  • Max Power Dissipation
    274W
  • Operating Temperature
    -40°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    70 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    1.7V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    198 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Emitter Voltage (VCEO)
    650V
  • Current - Collector Pulsed (Icm)
    200A
  • Collector Emitter Breakdown Voltage
    650V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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