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IMB2AT110
- Manufacturer's Part No.:IMB2AT110
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:TRANS PREBIAS DUAL PNP SMT6
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 7
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.26460 | US $0.26 |
10+ | US $0.17640 | US $1.76 |
30+ | US $0.13230 | US $3.97 |
100+ | US $0.10584 | US $10.58 |
500+ | US $0.09702 | US $48.51 |
1000+ | US $0.08820 | US $88.20 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerRohm Semiconductor
- Manufacturer's Part No.IMB2AT110
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series-
- ECCNEAR99
- MountSurface Mount
- hFE Min68
- HTS Code8541.21.00.75
- PolarityPNP
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2004
- VCEsat-Max0.3 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryBIP General Purpose Small Signals
- REACH StatusREACH Unaffected
- Terminal FormGULL WING
- Current Rating-30mA
- Number of Pins6
- Package / CaseSMD/SMT
- Terminal FinishTIN SILVER COPPER
- Factory Lead Time7 Weeks
- Power Dissipation300mW
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- Number of Elements2
- Voltage - Rated DC-50V
- Radiation HardeningNo
- Transition Frequency250MHz
- Element ConfigurationDual
- Max Breakdown Voltage50V
- Max Collector Current100mA
- Max Power Dissipation300mW
- Number of Terminations6
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)68
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Reflow Temperature-Max (s)10
- Continuous Collector Current-100mA
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)300mV
- Collector Emitter Breakdown Voltage50V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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