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IPB009N03LGATMA1
- Manufacturer's Part No.:IPB009N03LGATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 30V 180A TO263-7
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 48407
- Available: 3000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.86386 | US $3.86 |
10+ | US $3.47747 | US $34.77 |
30+ | US $2.70470 | US $81.14 |
100+ | US $2.22172 | US $222.17 |
500+ | US $2.12512 | US $1062.56 |
1000+ | US $1.93193 | US $1931.93 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB009N03LGATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count4
- Published2008
- Rise Time14ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusNot For New Designs
- Pbfree Codeno
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins7
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-7, D2Pak (6 Leads + Tab)
- Case ConnectionDRAIN
- Fall Time (Typ)22 ns
- Terminal FinishTin (Sn)
- Factory Lead Time39 Weeks
- Power Dissipation250W
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time26 ns
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Turn-Off Delay Time103 ns
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max250W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations6
- Rds On (Max) @ Id, Vgs0.95m Ω @ 100A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs227nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)180A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)30V
- Input Capacitance (Ciss) (Max) @ Vds25000pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C180A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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