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IPB015N04LGATMA1

  • Available: 41296

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.52914US $4.53
10+US $4.07623US $40.76
30+US $3.17040US $95.11
100+US $2.60426US $260.43
500+US $2.49103US $1245.51
1000+US $2.26457US $2264.57

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPB015N04LGATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    4
  • Published
    2008
  • Rise Time
    13ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    no
  • Subcategory
    FET General Purpose Power
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    21 ns
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    13 Weeks
  • Power Dissipation
    250W
  • Terminal Position
    SINGLE
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Number of Elements
    1
  • Turn On Delay Time
    25 ns
  • Vgs(th) (Max) @ Id
    2V @ 200μA
  • Turn-Off Delay Time
    108 ns
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    250W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    1.5m Ω @ 100A, 10V
  • Transistor Application
    SWITCHING
  • Max Dual Supply Voltage
    40V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    346nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    865 mJ
  • Continuous Drain Current (ID)
    120A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pulsed Drain Current-Max (IDM)
    400A
  • Input Capacitance (Ciss) (Max) @ Vds
    28000pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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