IPB017N08N5ATMA1
- Manufacturer's Part No.:IPB017N08N5ATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 80V 120A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 3000
- Available: 29780
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $73.34000 | US $73.34 |
10+ | US $55.00500 | US $550.05 |
30+ | US $47.67100 | US $1430.13 |
100+ | US $42.17050 | US $4217.05 |
500+ | US $39.60360 | US $19801.80 |
1000+ | US $36.67000 | US $36670.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB017N08N5ATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Height4.7mm
- Weight3.949996g
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2013
- Rise Time36ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)37 ns
- Factory Lead Time13 Weeks
- Power Dissipation375W
- Threshold Voltage3V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time40 ns
- Vgs(th) (Max) @ Id3.8V @ 280μA
- Turn-Off Delay Time102 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max375W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs1.7m Ω @ 100A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage80V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs223nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)177A
- Max Junction Temperature (Tj)175°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM)480A
- Drain to Source Breakdown Voltage80V
- Input Capacitance (Ciss) (Max) @ Vds16900pF @ 40V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C120A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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