IPB017N10N5ATMA1
- Manufacturer's Part No.:IPB017N10N5ATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 100V 180A D2PAK-7
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 4700
- Available: 4000
- Updated: 12 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.95680 | US $5.96 |
10+ | US $5.36112 | US $53.61 |
30+ | US $4.16976 | US $125.09 |
100+ | US $3.42516 | US $342.52 |
500+ | US $3.27624 | US $1638.12 |
1000+ | US $2.97840 | US $2978.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB017N10N5ATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Height4.5mm
- Weight1.59999g
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2004
- Rise Time23ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins7
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-7, D2Pak (6 Leads + Tab)
- Case ConnectionDRAIN
- Fall Time (Typ)27 ns
- Terminal FinishTin (Sn)
- Factory Lead Time13 Weeks
- Power Dissipation375W
- Number of Channels1
- Number of Elements1
- Turn On Delay Time33 ns
- Vgs(th) (Max) @ Id3.8V @ 279μA
- Turn-Off Delay Time80 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max375W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations6
- Rds On (Max) @ Id, Vgs1.7m Ω @ 100A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage100V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)273A
- Max Junction Temperature (Tj)175°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds15600pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C180A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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