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IPB039N10N3GATMA1
- Manufacturer's Part No.:IPB039N10N3GATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 100V 160A TO263-7
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 65148
- Available: 65148
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.87100 | US $2.87 |
10+ | US $2.58390 | US $25.84 |
30+ | US $2.00970 | US $60.29 |
100+ | US $1.65082 | US $165.08 |
500+ | US $1.57905 | US $789.53 |
1000+ | US $1.43550 | US $1435.50 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB039N10N3GATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count4
- Published2008
- Rise Time59ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeno
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins7
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Case ConnectionDRAIN
- Fall Time (Typ)14 ns
- Terminal FinishTin (Sn)
- Factory Lead Time13 Weeks
- Power Dissipation214W
- Terminal PositionSINGLE
- Number of Elements1
- Turn On Delay Time27 ns
- Vgs(th) (Max) @ Id3.5V @ 160μA
- Turn-Off Delay Time48 ns
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max214W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations6
- Rds On (Max) @ Id, Vgs3.9m Ω @ 100A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage100V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs117nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)340 mJ
- Continuous Drain Current (ID)160A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0039Ohm
- Pulsed Drain Current-Max (IDM)640A
- Input Capacitance (Ciss) (Max) @ Vds8410pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C160A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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