IPB06N03LA G
- Manufacturer's Part No.:IPB06N03LA G
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- Series:OptiMOS™
- Description:MOSFET N-CH 25V 50A D2PAK
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- In Stock: 3612
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- Available: 3612
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB06N03LA G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count4
- Published2006
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 40μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max83W Tc
- Reach Compliance Codecompliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs5.9m Ω @ 30A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min25V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)50A
- Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
- Avalanche Energy Rating (Eas)225 mJ
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)25V
- Drain-source On Resistance-Max0.0095Ohm
- Pulsed Drain Current-Max (IDM)350A
- Input Capacitance (Ciss) (Max) @ Vds2653pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C50A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)3 (168 Hours)
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