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IPB06N03LB
- Manufacturer's Part No.:IPB06N03LB
- Manufacturer:
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- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 30V 50A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3957
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- Available: 3957
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB06N03LB
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count4
- Published2006
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusDiscontinued
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating50A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 40μA
- Voltage - Rated DC30V
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max83W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs6.3m Ω @ 50A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
- Avalanche Energy Rating (Eas)164 mJ
- Continuous Drain Current (ID)50A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0063Ohm
- Pulsed Drain Current-Max (IDM)200A
- Input Capacitance (Ciss) (Max) @ Vds2782pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C50A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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