IPB09N03LA
- Manufacturer's Part No.:IPB09N03LA
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 25V 50A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3575
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB09N03LA
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count4
- Published2003
- Rise Time88ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating50A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 20μA
- Voltage - Rated DC25V
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max63W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs8.9m Ω @ 30A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
- Avalanche Energy Rating (Eas)75 mJ
- Continuous Drain Current (ID)50A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0151Ohm
- Input Capacitance (Ciss) (Max) @ Vds1642pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C50A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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