IPB100N06S2L05ATMA2
- Manufacturer's Part No.:IPB100N06S2L05ATMA2
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 55V 100A TO263-3
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 61791
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.88280 | US $2.88 |
10+ | US $2.59452 | US $25.95 |
30+ | US $2.01796 | US $60.54 |
100+ | US $1.65761 | US $165.76 |
500+ | US $1.58554 | US $792.77 |
1000+ | US $1.44140 | US $1441.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB100N06S2L05ATMA2
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Width9.45mm
- Height4.57mm
- Length10.31mm
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2005
- Rise Time25ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)24 ns
- Factory Lead Time10 Weeks
- Power Dissipation300W
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Turn-Off Delay Time98 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max300W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs4.4m Ω @ 80A, 10V
- Max Dual Supply Voltage55V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)810 mJ
- Continuous Drain Current (ID)100A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0056Ohm
- Pulsed Drain Current-Max (IDM)400A
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds5660pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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