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IPB107N20N3GATMA1

  • Available: 11103

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.00000US $4.00
10+US $3.60000US $36.00
30+US $2.80000US $84.00
100+US $2.30000US $230.00
500+US $2.20000US $1100.00
1000+US $2.00000US $2000.00

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  • Description
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Description

The IPB107N20N3GATMA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power electronics, including automotive, industrial, and consumer electronics.

Key Features:

  1. Voltage Rating: The IPB107N20N3GATMA1 has a maximum drain-source voltage (V_DS) of 200V, allowing it to handle high-voltage applications effectively.

  2. Current Rating: It can support a continuous drain current (I_D) of up to 107A, which makes it capable of managing significant power loads.

  3. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 7.5 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy drive with standard logic levels.

  5. Package Type: The device is housed in a TO-220 package, which provides good thermal performance and is suitable for mounting on heatsinks, facilitating effective heat dissipation.

  6. Thermal Resistance: The thermal resistance from junction to case (R_thJC) is low, ensuring that the device can operate at higher temperatures without compromising performance.

  7. Fast Switching: The IPB107N20N3GATMA1 is designed for fast switching applications, making it ideal for use in switch-mode power supplies (SMPS), DC-DC converters, and motor control applications.

  8. Robustness: The MOSFET is designed to withstand harsh operating conditions, with built-in protection features against over-voltage and over-current situations.

Applications:

  • Power Supplies: Used in high-efficiency power supply designs, including AC-DC converters and DC-DC converters.
  • Motor Drives: Suitable for driving electric motors in various applications, including automotive and industrial automation.
  • Renewable Energy: Can be utilized in solar inverters and other renewable energy systems for efficient power conversion.
  • Consumer Electronics: Employed in power management circuits for devices such as laptops, televisions, and other electronic gadgets.

Conclusion:

The IPB107N20N3GATMA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that excels in high-voltage and high-current applications. Its low on-resistance, fast switching capabilities, and robust design make it an excellent choice for engineers looking to optimize power management in their electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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