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IPB120N04S401ATMA1

  • Available: 1000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.39026US $2.39
10+US $2.15123US $21.51
30+US $1.67318US $50.20
100+US $1.37440US $137.44
500+US $1.31464US $657.32
1000+US $1.19513US $1195.13

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPB120N04S401ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Rise Time
    16ns
  • Vgs (Max)
    ±20V
  • Rds On Max
    1.5 mΩ
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    3
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Fall Time (Typ)
    36 ns
  • Factory Lead Time
    16 Weeks
  • Input Capacitance
    14nF
  • Turn On Delay Time
    34 ns
  • Vgs(th) (Max) @ Id
    4V @ 140μA
  • Turn-Off Delay Time
    41 ns
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    188W Tc
  • Rds On (Max) @ Id, Vgs
    1.5mOhm @ 100A, 10V
  • Max Dual Supply Voltage
    40V
  • Supplier Device Package
    D2PAK (TO-263AB)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Drain to Source Resistance
    1.35mOhm
  • Gate Charge (Qg) (Max) @ Vgs
    176nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    120A
  • Drain to Source Voltage (Vdss)
    40V
  • Input Capacitance (Ciss) (Max) @ Vds
    14000pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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