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IPB65R225C7ATMA1
- Manufacturer's Part No.:IPB65R225C7ATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:CoolMOS™ C7
- Description:MOSFET N-CH 650V 11A TO-263-3
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 3568
- Available: 3568
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.83718 | US $2.84 |
10+ | US $2.55346 | US $25.53 |
30+ | US $1.98603 | US $59.58 |
100+ | US $1.63138 | US $163.14 |
500+ | US $1.56045 | US $780.22 |
1000+ | US $1.41859 | US $1418.59 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB65R225C7ATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesCoolMOS™ C7
- ECCNEAR99
- MountSurface Mount
- Weight3.949996g
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2008
- Rise Time6ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusDiscontinued
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)10 ns
- Terminal FinishTin (Sn)
- Factory Lead Time20 Weeks
- Power Dissipation63W
- Number of Channels1
- Number of Elements1
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id4V @ 240μA
- Turn-Off Delay Time48 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max63W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs225m Ω @ 4.8A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage650V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)48 mJ
- Continuous Drain Current (ID)11A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.225Ohm
- Drain to Source Breakdown Voltage650V
- Input Capacitance (Ciss) (Max) @ Vds996pF @ 400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C11A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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