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IPB65R225C7ATMA1

  • In Stock: 3568
  • Available: 3568

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.83718US $2.84
10+US $2.55346US $25.53
30+US $1.98603US $59.58
100+US $1.63138US $163.14
500+US $1.56045US $780.22
1000+US $1.41859US $1418.59

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPB65R225C7ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    CoolMOS™ C7
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Weight
    3.949996g
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • Rise Time
    6ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Discontinued
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-252
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    10 ns
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    20 Weeks
  • Power Dissipation
    63W
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    9 ns
  • Vgs(th) (Max) @ Id
    4V @ 240μA
  • Turn-Off Delay Time
    48 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    63W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    225m Ω @ 4.8A, 10V
  • Transistor Application
    SWITCHING
  • Max Dual Supply Voltage
    650V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    48 mJ
  • Continuous Drain Current (ID)
    11A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.225Ohm
  • Drain to Source Breakdown Voltage
    650V
  • Input Capacitance (Ciss) (Max) @ Vds
    996pF @ 400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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