IPB80N06S2L07ATMA1
- Manufacturer's Part No.:IPB80N06S2L07ATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 55V 80A TO263-3
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 8909
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPB80N06S2L07ATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2006
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusDiscontinued
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 150μA
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max210W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs6.7m Ω @ 60A, 10V
- DS Breakdown Voltage-Min55V
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)80A
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Avalanche Energy Rating (Eas)450 mJ
- Drain to Source Voltage (Vdss)55V
- Drain-source On Resistance-Max0.0097Ohm
- Pulsed Drain Current-Max (IDM)320A
- Input Capacitance (Ciss) (Max) @ Vds3160pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C80A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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