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IPB80N06S2L07ATMA1

  • Available: 8909

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPB80N06S2L07ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • FET Type
    N-Channel
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Discontinued
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Terminal Position
    SINGLE
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    2V @ 150μA
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    210W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    6.7m Ω @ 60A, 10V
  • DS Breakdown Voltage-Min
    55V
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    80A
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Avalanche Energy Rating (Eas)
    450 mJ
  • Drain to Source Voltage (Vdss)
    55V
  • Drain-source On Resistance-Max
    0.0097Ohm
  • Pulsed Drain Current-Max (IDM)
    320A
  • Input Capacitance (Ciss) (Max) @ Vds
    3160pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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