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IPB80N06S2L11ATMA2

  • In Stock: 132058
  • Available: 132058

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.02356US $2.02
10+US $1.34904US $13.49
30+US $1.01178US $30.35
100+US $0.80942US $80.94
500+US $0.74197US $370.99
1000+US $0.67452US $674.52

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPB80N06S2L11ATMA2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    9.25mm
  • Height
    4.4mm
  • Length
    10mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Rise Time
    32ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    13 ns
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    158W
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
  • Number of Elements
    1
  • Turn On Delay Time
    11 ns
  • Vgs(th) (Max) @ Id
    2V @ 93μA
  • Turn-Off Delay Time
    46 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    158W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    10.7m Ω @ 40A, 10V
  • Max Dual Supply Voltage
    55V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    280 mJ
  • Continuous Drain Current (ID)
    80A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.0147Ohm
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance (Ciss) (Max) @ Vds
    2075pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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