IPB80P04P4L04ATMA1
- Manufacturer's Part No.:IPB80P04P4L04ATMA1
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- Series:Automotive, AEC-Q101, OptiMOS™
- Description:MOSFET P-CH TO263-3
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- Available: 91243
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.82123 | US $2.82 |
10+ | US $1.88082 | US $18.81 |
30+ | US $1.41061 | US $42.32 |
100+ | US $1.12849 | US $112.85 |
500+ | US $1.03445 | US $517.23 |
1000+ | US $0.94041 | US $940.41 |
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- Description
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The IPB80P04P4L04ATMA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for various applications, including power management, motor control, and DC-DC converters, where efficient switching and low on-resistance are critical.
Key Features:
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Voltage Rating: The IPB80P04P4L04ATMA1 has a maximum drain-source voltage (V_DS) of 40V, making it suitable for low-voltage applications.
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Current Rating: It can handle continuous drain currents (I_D) of up to 80A, which allows it to manage significant power loads effectively.
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On-Resistance: One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), typically around 4 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy drive with standard logic levels.
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Package Type: The IPB80P04P4L04ATMA1 is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heatsinks for effective heat dissipation.
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Thermal Resistance: The thermal resistance from junction to case (R_θJC) is low, which helps in maintaining lower operating temperatures during high-load conditions.
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Switching Performance: This MOSFET is optimized for fast switching speeds, making it suitable for high-frequency applications. Its gate charge (Q_g) is also low, which contributes to reduced switching losses.
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Robustness: The device is designed to withstand high levels of stress, with features that protect against over-voltage and over-current conditions.
Applications:
- Power Supply Circuits: Ideal for use in power supplies, where efficient switching is crucial for energy savings.
- Motor Drives: Suitable for driving motors in various applications, including automotive and industrial systems.
- DC-DC Converters: Commonly used in buck and boost converters due to its high efficiency and fast switching capabilities.
- Battery Management Systems: Effective in applications requiring precise control of battery charging and discharging.
Conclusion:
The IPB80P04P4L04ATMA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that excels in power management applications. Its combination of high current handling, low on-resistance, and robust thermal performance makes it a reliable choice for engineers looking to optimize their designs for efficiency and performance.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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