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IPD053N08N3GBTMA1
- Manufacturer's Part No.:IPD053N08N3GBTMA1
- Manufacturer:
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- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 80V 90A TO252-3
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 8913
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- Available: 8913
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPD053N08N3GBTMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count4
- Published2013
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeno
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Vgs(th) (Max) @ Id3.5V @ 90μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max150W Tc
- Reach Compliance Codecompliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs5.3m Ω @ 90A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min80V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)90A
- Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
- Avalanche Energy Rating (Eas)190 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)80V
- Drain-source On Resistance-Max0.0053Ohm
- Pulsed Drain Current-Max (IDM)360A
- Input Capacitance (Ciss) (Max) @ Vds4750pF @ 40V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C90A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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