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IPD50N06S2L13ATMA1

  • Available: 3584

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPD50N06S2L13ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • FET Type
    N-Channel
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Discontinued
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Terminal Position
    SINGLE
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Number of Elements
    1
  • Reference Standard
    AEC-Q101
  • Vgs(th) (Max) @ Id
    2V @ 80μA
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    136W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    12.7m Ω @ 34A, 10V
  • DS Breakdown Voltage-Min
    55V
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    50A
  • Gate Charge (Qg) (Max) @ Vgs
    69nC @ 10V
  • Avalanche Energy Rating (Eas)
    240 mJ
  • Drain to Source Voltage (Vdss)
    55V
  • Drain-source On Resistance-Max
    0.0167Ohm
  • Pulsed Drain Current-Max (IDM)
    200A
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    50A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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