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IPD50R500CEBTMA1
- Manufacturer's Part No.:IPD50R500CEBTMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:CoolMOS™
- Description:MOSFET N-CH 500V 7.6A PG-TO252
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3792
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- Available: 3792
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPD50R500CEBTMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesCoolMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingCut Tape (CT)
- Published2013
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- FET FeatureSuper Junction
- Part StatusDiscontinued
- Pbfree Codeno
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time6 Weeks
- Terminal PositionSINGLE
- Number of Elements1
- Vgs(th) (Max) @ Id3.5V @ 200μA
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max57W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs500m Ω @ 2.3A, 13V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min500V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs18.7nC @ 10V
- Avalanche Energy Rating (Eas)129 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)500V
- Drain-source On Resistance-Max0.5Ohm
- Pulsed Drain Current-Max (IDM)24A
- Input Capacitance (Ciss) (Max) @ Vds433pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On)13V
- Current - Continuous Drain (Id) @ 25°C7.6A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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