IPD65R660CFDAATMA1
- Manufacturer's Part No.:IPD65R660CFDAATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Automotive, AEC-Q101, CoolMOS™
- Description:MOSFET N-CH TO252-3
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 104787
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.58612 | US $2.59 |
10+ | US $1.72408 | US $17.24 |
30+ | US $1.29306 | US $38.79 |
100+ | US $1.03445 | US $103.45 |
500+ | US $0.94824 | US $474.12 |
1000+ | US $0.86204 | US $862.04 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPD65R660CFDAATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesAutomotive, AEC-Q101, CoolMOS™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2008
- Rise Time8ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)10 ns
- Terminal FinishTin (Sn)
- Factory Lead Time18 Weeks
- Terminal PositionSINGLE
- Number of Elements1
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id4.5V @ 214.55μA
- Turn-Off Delay Time40 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max62.5W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs660m Ω @ 3.22A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage650V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)115 mJ
- Continuous Drain Current (ID)6A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.66Ohm
- Pulsed Drain Current-Max (IDM)17A
- Input Capacitance (Ciss) (Max) @ Vds543pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C6A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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