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IPD65R660CFDAATMA1

  • Available: 104787

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.58612US $2.59
10+US $1.72408US $17.24
30+US $1.29306US $38.79
100+US $1.03445US $103.45
500+US $0.94824US $474.12
1000+US $0.86204US $862.04

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPD65R660CFDAATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    Automotive, AEC-Q101, CoolMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • Rise Time
    8ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-252AA
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    10 ns
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    18 Weeks
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Turn On Delay Time
    9 ns
  • Vgs(th) (Max) @ Id
    4.5V @ 214.55μA
  • Turn-Off Delay Time
    40 ns
  • Operating Temperature
    -40°C~150°C TJ
  • Power Dissipation-Max
    62.5W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    660m Ω @ 3.22A, 10V
  • Transistor Application
    SWITCHING
  • Max Dual Supply Voltage
    650V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    6A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    115 mJ
  • Continuous Drain Current (ID)
    6A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.66Ohm
  • Pulsed Drain Current-Max (IDM)
    17A
  • Input Capacitance (Ciss) (Max) @ Vds
    543pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    6A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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