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IPD65R950C6ATMA1
- Manufacturer's Part No.:IPD65R950C6ATMA1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:CoolMOS™ C6
- Description:MOSFET N-CH TO252-3
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 175057
- Available: 175057
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.47009 | US $1.47 |
10+ | US $0.98006 | US $9.80 |
30+ | US $0.73505 | US $22.05 |
100+ | US $0.58804 | US $58.80 |
500+ | US $0.53903 | US $269.52 |
1000+ | US $0.49003 | US $490.03 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPD65R950C6ATMA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesCoolMOS™ C6
- ECCNEAR99
- MountSurface Mount
- Weight3.949996g
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2008
- Rise Time5.2ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusNot For New Designs
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ)13.6 ns
- Terminal FinishTin (Sn)
- Factory Lead Time12 Weeks
- Power Dissipation37W
- Number of Channels1
- Number of Elements1
- Turn On Delay Time6.6 ns
- Vgs(th) (Max) @ Id3.5V @ 200μA
- Turn-Off Delay Time41 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max37W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs950m Ω @ 1.5A, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage650V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs15.3nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)50 mJ
- Continuous Drain Current (ID)4.5A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.95Ohm
- Drain to Source Breakdown Voltage650V
- Input Capacitance (Ciss) (Max) @ Vds328pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C4.5A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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