IPD80R1K4CEATMA1

The IPD80R1K4CEATMA1 is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-current applications.

Key Features:

1. Type: N-channel MOSFET
2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 80V, making it suitable for medium-voltage applications.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 1.4A, which is ideal for various power applications.
4. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 1.4 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing efficiency.
5. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically in the range of 2V to 4V, allowing for easy drive with standard logic levels.
6. Package Type: The IPD80R1K4CEATMA1 is housed in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
7. Thermal Resistance: The thermal resistance from junction to case (R_θJC) is low, allowing for effective heat management and ensuring reliability under load.
8. Switching Performance: The device is optimized for fast switching, making it suitable for high-frequency applications.

Applications:

• Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
• Motor Drives: Suitable for driving DC motors and other inductive loads.
• DC-DC Converters: Ideal for buck, boost, and other converter topologies.
• Automotive Applications: Can be used in automotive power management systems due to its robust performance.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 50W, depending on the cooling conditions.
• Body Diode Characteristics: The device features an intrinsic body diode, which can conduct in reverse, providing additional functionality in certain applications.

Reliability:

Infineon Technologies is known for its commitment to quality and reliability, and the IPD80R1K4CEATMA1 is no exception. It is designed to meet stringent automotive and industrial standards, ensuring long-term performance in demanding environments.

Conclusion:

The IPD80R1K4CEATMA1 is a versatile and efficient power MOSFET that offers excellent performance for a wide range of applications. Its combination of low on-resistance, high current capability, and robust thermal characteristics makes it a preferred choice for engineers looking to optimize power management solutions.