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IPDD60R050G7
- Manufacturer's Part No.:IPDD60R050G7
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- Description:PG-HDSOP-10 MOSFET RoHS
- Quantity:Buy NowAdd to Cart
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- In Stock: 2619
- Available: 4306
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $17.05680 | US $17.06 |
| 10+ | US $15.35112 | US $153.51 |
| 30+ | US $11.93976 | US $358.19 |
| 100+ | US $9.80766 | US $980.77 |
| 500+ | US $9.38124 | US $4690.62 |
| 1000+ | US $8.52840 | US $8528.40 |
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- Description
- Alternatives
- Shopping Guide
The IPDD60R050G7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of industrial and consumer electronics applications.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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