IPG20N06S3L-23
- Manufacturer's Part No.:IPG20N06S3L-23
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET 2N-CH 55V 20A TDSON-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 2601
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPG20N06S3L-23
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Pin Count8
- Published2008
- Rise Time35ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerVDFN
- Case ConnectionDRAIN
- Fall Time (Typ)75 ns
- Terminal FinishMATTE TIN
- Base Part Number*PG20N06
- Power Dissipation45W
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements2
- Vgs(th) (Max) @ Id2.2V @ 20μA
- Turn-Off Delay Time40 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation45W
- Operating Temperature-55°C~175°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs23m Ω @ 16A, 10V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)33A
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Gate to Source Voltage (Vgs)16V
- Avalanche Energy Rating (Eas)110 mJ
- Continuous Drain Current (ID)20A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)55V
- Drain-source On Resistance-Max0.023Ohm
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds2950pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PDSO-F6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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