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IPG20N06S415ATMA1

  • In Stock: 3764
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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPG20N06S415ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    Automotive, AEC-Q101, OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Rise Time
    2ns
  • FET Feature
    Standard
  • Part Status
    Discontinued
  • Power - Max
    50W
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    FLAT
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerVDFN
  • Fall Time (Typ)
    9 ns
  • Number of Elements
    2
  • Turn On Delay Time
    12 ns
  • Vgs(th) (Max) @ Id
    4V @ 20μA
  • Turn-Off Delay Time
    17 ns
  • Max Power Dissipation
    50W
  • Operating Temperature
    -55°C~175°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    15.5m Ω @ 17A, 10V
  • Max Dual Supply Voltage
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    90 mJ
  • Continuous Drain Current (ID)
    20A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.0155Ohm
  • Input Capacitance (Ciss) (Max) @ Vds
    2260pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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