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IPG20N06S4L14ATMA2

  • Available: 148419

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.73409US $1.73
10+US $1.15606US $11.56
30+US $0.86705US $26.01
100+US $0.69364US $69.36
500+US $0.63583US $317.92
1000+US $0.57803US $578.03

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPG20N06S4L14ATMA2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    Automotive, AEC-Q101, OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.15mm
  • Height
    1mm
  • Length
    5.15mm
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • Rise Time
    2ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    FLAT
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerVDFN
  • Fall Time (Typ)
    15 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    50W
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    8 ns
  • Vgs(th) (Max) @ Id
    2.2V @ 20μA
  • Turn-Off Delay Time
    40 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    50W
  • Operating Temperature
    -55°C~175°C TJ
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    13.7m Ω @ 17A, 10V
  • Max Dual Supply Voltage
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Gate to Source Voltage (Vgs)
    16V
  • Avalanche Energy Rating (Eas)
    90 mJ
  • Continuous Drain Current (ID)
    20A
  • Max Junction Temperature (Tj)
    175°C
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.0137Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    2890pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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