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IPG20N10S4L22ATMA1

  • In Stock: 24236
  • Available: 66699

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.91808US $1.92
10+US $1.27872US $12.79
30+US $0.95904US $28.77
100+US $0.76723US $76.72
500+US $0.70330US $351.65
1000+US $0.63936US $639.36

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPG20N10S4L22ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    Automotive, AEC-Q101, OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Height
    1mm
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • Rise Time
    3ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Package / Case
    8-PowerVDFN
  • Fall Time (Typ)
    18 ns
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    60W
  • Number of Elements
    2
  • Turn On Delay Time
    5 ns
  • Vgs(th) (Max) @ Id
    2.1V @ 25μA
  • Turn-Off Delay Time
    30 ns
  • Max Power Dissipation
    60W
  • Operating Temperature
    -55°C~175°C TJ
  • Reach Compliance Code
    not_compliant
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 17A, 10V
  • Max Dual Supply Voltage
    100V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Gate to Source Voltage (Vgs)
    16V
  • Continuous Drain Current (ID)
    20A
  • Max Junction Temperature (Tj)
    175°C
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    1755pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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