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IPI084N06L3GXKSA1

  • In Stock: 99327
  • Available: 99327

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.59140US $2.59
10+US $1.72760US $17.28
30+US $1.29570US $38.87
100+US $1.03656US $103.66
500+US $0.95018US $475.09
1000+US $0.86380US $863.80

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPI084N06L3GXKSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.52mm
  • Height
    9.45mm
  • Length
    10.36mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    2008
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    12 Weeks
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Elements
    1
  • Turn On Delay Time
    15 ns
  • Vgs(th) (Max) @ Id
    2.2V @ 34μA
  • Turn-Off Delay Time
    37 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    79W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    8.4m Ω @ 50A, 10V
  • Transistor Application
    SWITCHING
  • Max Dual Supply Voltage
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    50A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.0084Ohm
  • Pulsed Drain Current-Max (IDM)
    200A
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    4900pF @ 30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    50A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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